A temperature sensor in 0.6 /spl mu/m CMOS technology

Abstract

A fully integrated CMOS temperature sensor is presented. The design uses parasitic substrate bipolar transistors as a temperature sensor. The temperature and reference signals are first converted into current signals by a voltage-to-current converter and then converted to a digital output by a sigma-delta analog-to-digital converter. Fabricated in a 0.6 /spl mu/m CMOS process, this circuit occupies an active area of 0.7 mm/sup 2/. In the temperature range from 40 to 130/spl deg/C, the error is /spl plusmn/1.5/spl deg/C after one-point calibration.