{"title":"Reliability of commercial InP HBTs under high current density lifetests","authors":"K. Feng, N. Nguyen, C. Nguyen","doi":"10.1109/GAAS.2002.1049036","DOIUrl":null,"url":null,"abstract":"GCS has successfully developed a high performance and manufacturable 4-inch InP HBT technology for commercial pure-play foundry services. In this paper, we demonstrated that with our proprietary device design and process technology, GCS's InP HBTs show potentially excellent reliability under lifetests at current densities of 100kA/cm/sup 2/ or higher. The V/sub be/'s at both low and high current densities have little shift up to 4000hrs under 150kA/cm/sup 2/, which indicates that the C-doped InP HBT is potentially much more stable compared to Be-doped InP HBT for high current density operation. The emitter resistance also shows very stable behavior over the stress time under high current density stresses.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
GCS has successfully developed a high performance and manufacturable 4-inch InP HBT technology for commercial pure-play foundry services. In this paper, we demonstrated that with our proprietary device design and process technology, GCS's InP HBTs show potentially excellent reliability under lifetests at current densities of 100kA/cm/sup 2/ or higher. The V/sub be/'s at both low and high current densities have little shift up to 4000hrs under 150kA/cm/sup 2/, which indicates that the C-doped InP HBT is potentially much more stable compared to Be-doped InP HBT for high current density operation. The emitter resistance also shows very stable behavior over the stress time under high current density stresses.
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