{"title":"Development of a Pulsed IMPATT Diode Amplifier","authors":"B. E. Sigmon, T.W. Van Alstyne","doi":"10.1109/MWSYM.1986.1132121","DOIUrl":null,"url":null,"abstract":"The impedance transformation properties of parallel coupled lines have been used to develop broadband reflection amplifiers operating in X-band. These amplifiers have demonstrated peak powers of 40 watts (single IMPATT diode), 63 watts (two diode combiner), and 110 watts (four diode combiner). 3 dB bandwidths of 1.4 to 3 GHz (14 to 30%) have been attained.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1986.1132121","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The impedance transformation properties of parallel coupled lines have been used to develop broadband reflection amplifiers operating in X-band. These amplifiers have demonstrated peak powers of 40 watts (single IMPATT diode), 63 watts (two diode combiner), and 110 watts (four diode combiner). 3 dB bandwidths of 1.4 to 3 GHz (14 to 30%) have been attained.
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