{"title":"High Input Impedance VM Biquad Filter Using Single Active Element","authors":"C. Shankar, Sajai Vir Singh, Vinay Anand Tikkiwal","doi":"10.1109/ICSC48311.2020.9182753","DOIUrl":null,"url":null,"abstract":"This paper presents a biquad filter, capable of realizing two responses in voltage mode i.e. low pass (LP) and band Pass (BP). The circuit uses only single input in voltage mode applied at high impedance port and simultaneously realizes both responses. Moreover, it uses only single DVCCTA as active element and four grounded passive elements (two capacitors and two resistors). In addition, it also shows low sensitivity of filter parameters, tuning capability, low power consumption, etc. The theoretical aspect is proven by simulating the circuit in PSICE using 180 nm CMOS parameters.","PeriodicalId":334609,"journal":{"name":"2020 6th International Conference on Signal Processing and Communication (ICSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 6th International Conference on Signal Processing and Communication (ICSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSC48311.2020.9182753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents a biquad filter, capable of realizing two responses in voltage mode i.e. low pass (LP) and band Pass (BP). The circuit uses only single input in voltage mode applied at high impedance port and simultaneously realizes both responses. Moreover, it uses only single DVCCTA as active element and four grounded passive elements (two capacitors and two resistors). In addition, it also shows low sensitivity of filter parameters, tuning capability, low power consumption, etc. The theoretical aspect is proven by simulating the circuit in PSICE using 180 nm CMOS parameters.