Electrochemical deposition and characterization of Copper Pillar Bumps — Application towards Flip chip bonding

Sampada Sameer Naik, H. Sanjeev, Megha Agrawal, Mahalakshmi S
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Abstract

The pre-processes targeting Flip Chip Assembly of copper pillars consists of spin coating of photo resists, direct writing, development of the photo resist, electroplating. The Flip chip assembly is targeted to verify the fine pitch bonding that is practically possible. Hence a unique design consisting of different pitch dimensions and pillar diameters are designed. In order to achieve the minimum possible pitch in the flip chip bonding, various experiments with the pre-processes viz., spin coating with different resists, direct pattern writing with different laser powers and other parameters, electroplating of copper (Cu) with varying parameters, are conducted to see the effect of each of these processes in practically achieving successful flip chip bonding/assembly with minimum pitch and minimum diameter design. This paper describes Copper pillar deposition using acid copper electrolyte by electro chemical deposition. A positive photo-resist AZ9260 up to thickness of $16\ \mu\mathrm{m}$ and smallest feature of diameter $10\mu\mathrm{m}$ were fabricated by multi step spin coating. Spin coating and lithography parameters were optimized. Electroplating of copper pillars was carried out by pulse plating and pulse reverse technique. The deposited copper pillars were characterized by Con-focal microscopy, X-Ray Diffraction and Scanning Electron Microscopy. Electrical characterization of Copper Pillars was done by four probe method. The targeted gap (between two pillars) dimensions are $10\mu\mathrm{m},\ 20\mu\mathrm{m},\ 30\mu\mathrm{m}$ and $40\mu\mathrm{m}$ with the diameter dimensions of $10\mu\mathrm{m},\ 15\mu\mathrm{m},\ 20\mu\mathrm{m}$ and $25\mu\mathrm{m}$.
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铜柱凸点的电化学沉积和表征-在倒装芯片键合中的应用
针对铜柱倒装芯片组件的预处理包括光阻旋转镀膜、直接写入、光阻显影、电镀。倒装芯片组装的目标是验证实际可行的细间距键合。因此,设计了一种独特的设计,包括不同的节距尺寸和柱直径。为了在倒装芯片键合中实现尽可能小的节距,进行了各种预处理实验,即不同抗蚀剂的自旋涂层、不同激光功率和其他参数的直接图案书写、不同参数的电镀铜(Cu),以观察这些工艺在实际实现成功的最小节距和最小直径设计的倒装芯片键合/组装中的作用。本文介绍了用酸性铜电解液电化学沉积铜柱的方法。采用多步自旋镀膜法制备了厚度为$16\ \mu\mathrm{m}$、直径为$10\mu\mathrm{m}$的正极光刻胶AZ9260。对旋涂和光刻工艺参数进行了优化。采用脉冲镀和脉冲反镀技术对铜柱进行了电镀。采用共焦显微镜、x射线衍射和扫描电镜对铜柱进行了表征。采用四探针法对铜柱进行了电学表征。目标间距(两根柱子之间)尺寸为$10\mu\ mathm {m}、$ 20\mu\ mathm {m}、$ 30\mu\ mathm {m}$和$40\mu\ mathm {m}$,直径尺寸为$10\mu\ mathm {m}、$ 15\mu\ mathm {m}、$ 20\mu\ mathm {m}$和$25\mu\ mathm {m}$。
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