J. Leufker, D. Fritsche, G. Tretter, M. Khafaji, C. Carta, F. Ellinger
{"title":"Design, modelling and characterization of transmission lines for mm-wave silicon ICs","authors":"J. Leufker, D. Fritsche, G. Tretter, M. Khafaji, C. Carta, F. Ellinger","doi":"10.1109/IMOC.2015.7369151","DOIUrl":null,"url":null,"abstract":"This paper describes the design, modelling and characterization of transmission lines for millimetre wave silicon integrated circuits up to 65 GHz. The simulation results of three different EM simulators for a selected hybrid coplanar layout structure are presented. Two different deembedding methods are investigated and compared with respect to sensitivity to typical measurement errors. Finally both methods are applied to the measurement results of the fabricated test structures in a 250 nm BiCMOS technology showing good agreement to EM simulations and predicted sensitivity to measurement errors.","PeriodicalId":431462,"journal":{"name":"2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMOC.2015.7369151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper describes the design, modelling and characterization of transmission lines for millimetre wave silicon integrated circuits up to 65 GHz. The simulation results of three different EM simulators for a selected hybrid coplanar layout structure are presented. Two different deembedding methods are investigated and compared with respect to sensitivity to typical measurement errors. Finally both methods are applied to the measurement results of the fabricated test structures in a 250 nm BiCMOS technology showing good agreement to EM simulations and predicted sensitivity to measurement errors.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
