{"title":"Design of a low-power low-phase noise MEMS compatible S-band oscillator in 130 nm CMOS technology","authors":"A. Bhattacharya, T. K. Bhattacharyya","doi":"10.1109/INDCON.2010.5712587","DOIUrl":null,"url":null,"abstract":"This paper discusses the design details of a MEMS compatible low-power, low-phase noise CMOS oscillator. The VCO was designed in UMC 130 nm RFCMOS technology for a multiband system with low power dissipation of 1.17 mW and low phase noise of −117.78 dBc/Hz at 1 MHz offset from the oscillation frequency. The centre frequency of oscillation was chosen to be 2.4 GHz which is a standard for Zigbee applications.","PeriodicalId":109071,"journal":{"name":"2010 Annual IEEE India Conference (INDICON)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Annual IEEE India Conference (INDICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INDCON.2010.5712587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper discusses the design details of a MEMS compatible low-power, low-phase noise CMOS oscillator. The VCO was designed in UMC 130 nm RFCMOS technology for a multiband system with low power dissipation of 1.17 mW and low phase noise of −117.78 dBc/Hz at 1 MHz offset from the oscillation frequency. The centre frequency of oscillation was chosen to be 2.4 GHz which is a standard for Zigbee applications.
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