S. Rennon, K. Avary, F. Klopf, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel
{"title":"Edge-emitting microlasers with a single quantum dot active layer","authors":"S. Rennon, K. Avary, F. Klopf, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel","doi":"10.1109/ISLC.2000.882326","DOIUrl":null,"url":null,"abstract":"We have realized edge emitting microlasers on a GaInAs-AlGaAs quantum dot laser structure with deeply etched DBR mirrors. Lasers with 40 /spl mu/m cavity length show CW operation at room temperature, exhibiting threshold currents below 4 mA. CW output powers exceed 5 mW for 40 /spl mu/m long lasers emitting from the ground state at 980 nm.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"393 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have realized edge emitting microlasers on a GaInAs-AlGaAs quantum dot laser structure with deeply etched DBR mirrors. Lasers with 40 /spl mu/m cavity length show CW operation at room temperature, exhibiting threshold currents below 4 mA. CW output powers exceed 5 mW for 40 /spl mu/m long lasers emitting from the ground state at 980 nm.
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