G. Navarro, A. Persico, E. Henaff, F. Aussenac, Pierre Noé, C. Jahan, L. Perniola, V. Sousa, E. Vianello, B. D. Salvo
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引用次数: 10
Abstract
We present for the first time, the effects of SiO2-doping in GeTe-based Phase-Change Memory (PCM) technology. We demonstrate a 50% RESET power reduction correlated with the enhanced thermal and electrical efficiency of the cell by SiO2-doping. Moreover we show the possibility to engineer the threshold voltage (VTH) of the cell at high operating temperature, thanks to the changed crystallization dynamics induced by SiO2 doping into GeTe.
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