M. Al-Ajmi, A. AlBlushi, R. Al-Mamari, Z. Nadir, M. Bait-Suwailam
{"title":"Class-F power amplifier with high power added efficiency for 900MHz","authors":"M. Al-Ajmi, A. AlBlushi, R. Al-Mamari, Z. Nadir, M. Bait-Suwailam","doi":"10.1109/ICED.2014.7015786","DOIUrl":null,"url":null,"abstract":"This paper presents a design and implementation of a Power Amplifier for GSM Transmitters using a high efficiency class-F type. A typical class-F circuit has been designed, simulated and implemented using GaAs pHEMT transistor at a frequency of 900MHz. The proposed design achieves 95.5% of theoretical Power Added Efficiency and 28.9dBm output power. To validate the designed circuit, experimental work is also conducted. Good agreement is achieved.","PeriodicalId":143806,"journal":{"name":"2014 2nd International Conference on Electronic Design (ICED)","volume":"35 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Electronic Design (ICED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICED.2014.7015786","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
This paper presents a design and implementation of a Power Amplifier for GSM Transmitters using a high efficiency class-F type. A typical class-F circuit has been designed, simulated and implemented using GaAs pHEMT transistor at a frequency of 900MHz. The proposed design achieves 95.5% of theoretical Power Added Efficiency and 28.9dBm output power. To validate the designed circuit, experimental work is also conducted. Good agreement is achieved.
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