{"title":"The effect of chirp and wavelength for ultrafast bulk modification of solids with tightly focused laser pulses","authors":"E. Mareev, E. Migal, F. Potemkin","doi":"10.1117/12.2603492","DOIUrl":null,"url":null,"abstract":"We report on the clear difference in the behavior of laser-matter interaction of tightly focused high-intensity pulses with the bulk of solids when chirping and tuning the wavelength of the laser driver from near-IR to mid-IR. In transparent dielectrics, laser wavelength scaling leads to the change in the heating mechanism which, in turn, leads to a weak dependence of the plasma formation threshold on the pulse duration in mid-IR (4.6 μm) and a significant impact in the case of the near-IR (1.24 μm) excitation. In the case of semiconductors, the ionization mechanism remains within the framework of the multiphoton approximation, but an increase in the photon order for excitation by mid-IR pulses leads to a decrease in delocalization processes and losses in the prefocal region.","PeriodicalId":202227,"journal":{"name":"Laser Damage","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Laser Damage","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2603492","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report on the clear difference in the behavior of laser-matter interaction of tightly focused high-intensity pulses with the bulk of solids when chirping and tuning the wavelength of the laser driver from near-IR to mid-IR. In transparent dielectrics, laser wavelength scaling leads to the change in the heating mechanism which, in turn, leads to a weak dependence of the plasma formation threshold on the pulse duration in mid-IR (4.6 μm) and a significant impact in the case of the near-IR (1.24 μm) excitation. In the case of semiconductors, the ionization mechanism remains within the framework of the multiphoton approximation, but an increase in the photon order for excitation by mid-IR pulses leads to a decrease in delocalization processes and losses in the prefocal region.