T. A. Abbas, N. Dutton, Oscar Almer, S. Pellegrini, Y. Henrion, R. Henderson
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引用次数: 109
Abstract
We present the first 3D-stacked backside illuminated (BSI) single photon avalanche diode (SPAD) image sensor capable of both single photon counting (SPC) intensity, and time resolved imaging. The 128×120 prototype has a pixel pitch of 7.83 μm making it the smallest pixel reported for SPAD image sensors. A low power, high density 40nm bottom tier hosts the quenching front end and processing electronics while an imaging specific 65nm top tier hosts the photo-detectors with a 1-to-1 hybrid bond connection [1]. The SPAD exhibits a median dark count rate (DCR) below 200cps at room temperature and 1V excess bias, and has a peak photon detection probability (PDP) of 27.5% at 640nm and 3 V excess bias.
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