{"title":"Porous Silicon as a Material for Nanocomposites and the Effect of its Parameters on the Morphology of Silver Clusters","authors":"Y. Spivak","doi":"10.1109/EEXPOLYTECH.2018.8564424","DOIUrl":null,"url":null,"abstract":"On the example of the por-Si/Ag composites it is demonstrated the ability to control the morphology of the guest material (Ag) by changing the parameters of the porous media (por-Si). Two groups of key parameters of porous materials important for creating composites based on them are discussed. Porous silicon was obtained by electrochemical anodic etching. The introducing Ag into the pores was performed by the cathodic electrochemical deposition. It is observed the increasing the anodizing time is leads to the noticeably changes of wetting angle of por-Si, and, in turn, significantly affects the morphology of Ag clusters. The growth mechanisms of Ag clusters on the por-Si surface and the fields of its potential application are discussed.","PeriodicalId":296618,"journal":{"name":"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EEXPOLYTECH.2018.8564424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
On the example of the por-Si/Ag composites it is demonstrated the ability to control the morphology of the guest material (Ag) by changing the parameters of the porous media (por-Si). Two groups of key parameters of porous materials important for creating composites based on them are discussed. Porous silicon was obtained by electrochemical anodic etching. The introducing Ag into the pores was performed by the cathodic electrochemical deposition. It is observed the increasing the anodizing time is leads to the noticeably changes of wetting angle of por-Si, and, in turn, significantly affects the morphology of Ag clusters. The growth mechanisms of Ag clusters on the por-Si surface and the fields of its potential application are discussed.