Process and challenges of ultra-thick spin-on photoresist

S. W. Ho, S. A. Sek, B. L. Lau, V. S. Rao, T. Chai
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引用次数: 2

Abstract

In this paper, spin-on photoresists were evaluated to form ultra-thick photoresist mold for electroforming of 200 μm height Cu pillar structures with a diameter of 150 μm. Two photoresists materials of different exposure tone (positive & negative) were assessed. A double spin-coating process was required to achieve the required resist film thickness. The soft-bake, exposure and developing parameters were optimized to obtain suitable photoresist profile. Substrates with developed photoresists were subjected to electroplating process to test their chemical resistance A stepped EBR was implemented to overcome poor electrical contact with plating jig due to the thick edge bead. After Cu electroplating, the different materials were subjected to stripping solvent to assess their stripping performance.
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超厚自旋光刻胶的工艺与挑战
本文利用自旋光阻剂对200 μm高、直径150 μm的铜柱结构电铸超厚光阻剂模具进行了评价。对两种不同曝光色调(正、负)的光刻胶材料进行了评价。为了达到要求的抗蚀膜厚度,需要采用双旋涂工艺。对软焙、曝光和显影参数进行了优化,得到了合适的光刻胶轮廓。利用已开发的光刻胶基片进行电镀工艺,以测试其耐化学性。采用阶梯式EBR工艺,克服了由于边珠较厚而导致的与电镀夹具电接触不良的问题。电镀铜后,对不同材料进行溶出溶剂测试,评价其溶出性能。
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