Zhan-Wen Song, Cheng-Tse Tang, San-Liang Lee, Y. Hung
{"title":"Reducing the optical loss of polysilicon waveguide in bulk CMOS by waveguide geometry engineering","authors":"Zhan-Wen Song, Cheng-Tse Tang, San-Liang Lee, Y. Hung","doi":"10.1109/OECC48412.2020.9273668","DOIUrl":null,"url":null,"abstract":"Based on the zero-process-change methodology, we successfully reduce the propagation loss of polysilicon waveguide from 112 dB/cm to only 38 dB/cm by applying subwavelength grating waveguide (SWG) design. Low propagation loss in SWG waveguide is attributed to a significantly reduced optical overlap factor of 0.09 to bulk polysilicon. This achievement can not be made by solely shrinking the waveguide dimension, thus validates a promising design path towards practical photonic-electronic applications in bulk CMOS.","PeriodicalId":433309,"journal":{"name":"2020 Opto-Electronics and Communications Conference (OECC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Opto-Electronics and Communications Conference (OECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OECC48412.2020.9273668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Based on the zero-process-change methodology, we successfully reduce the propagation loss of polysilicon waveguide from 112 dB/cm to only 38 dB/cm by applying subwavelength grating waveguide (SWG) design. Low propagation loss in SWG waveguide is attributed to a significantly reduced optical overlap factor of 0.09 to bulk polysilicon. This achievement can not be made by solely shrinking the waveguide dimension, thus validates a promising design path towards practical photonic-electronic applications in bulk CMOS.