An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Abstract

Enhancement mode 650V rated p-GaN gate HEMTs are fabricated on 200 mm p⁺ Si substrates by using an industrial, Au-free process. The devices show true e-mode performance, with a high Vt of 2.8 V, low off-state leakage current and are dynamic RDS-ON free over the complete VDS and temperature range. High temperature reverse bias (HTRB) testing is done on-wafer and after packaging. For the first time, 650 V e-mode power HEMTs realized on 200 mm Si substrates, show industry ready device performance and pass 1008 hour reliability testing, at VGS=0 V, VDS=650 V.