Fabrication and Characterization of Si/GaInP Heterojunction Photodetectors

Abstract

This paper presents the fabrication of the Si/GaInP heterojunction photodetectors using transfer printing of silicon nanomembranes (SiNMs). Doped SiNM was transferred to a GaInP/GaAs substrate using a polydimethylsiloxane (PDMS) stamp. An adhesion interfacial layer was used to bond the two materials together. The heterogeneous integration of Si, GaInP, and GaAs layers formed a P-I-N structure for photo detection. Very low dark current of 0.82 nA was measured under a reverse bias of 3 V. A photo current to dark current ratio of 7.5 × 103 was measured. This result shows high potential of heterojunction photodetectors based on the transfer printing method.