{"title":"Study of the Cluster Ion for Gate Oxide Nitrogen Measurement by TOF-SIMS","authors":"H. Teo, Yun Wang, Z. Mo","doi":"10.1109/IPFA.2018.8452579","DOIUrl":null,"url":null,"abstract":"Measurement of the nitrogen in ultrathin gate oxide is important for the precise control of gate oxide quality in the FEOL manufacturing process. TOF-SIMS is one of the most capable analysis tools for the nitrogen distribution in the bulk of gate oxide and substrate interface, nitrogen concentration as well as dose measurement. However, there are many cluster ions formed during primary ion bombardment and subsequently captured in the mass spectrometry. Some discrepancy during data analysis was possibly observed for certain cluster ions. In this paper, the ion cluster for the characterization of nitrogen in the gate oxide will be discussed and demonstrated in one of the actual applications in manufacturing control process.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Measurement of the nitrogen in ultrathin gate oxide is important for the precise control of gate oxide quality in the FEOL manufacturing process. TOF-SIMS is one of the most capable analysis tools for the nitrogen distribution in the bulk of gate oxide and substrate interface, nitrogen concentration as well as dose measurement. However, there are many cluster ions formed during primary ion bombardment and subsequently captured in the mass spectrometry. Some discrepancy during data analysis was possibly observed for certain cluster ions. In this paper, the ion cluster for the characterization of nitrogen in the gate oxide will be discussed and demonstrated in one of the actual applications in manufacturing control process.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
