Threshold voltage roll-off for triple gate FinFET analysis based on several semiconductors used as substrate

Abstract

The literature of power device must aware of the fact of proper tradeoff between the choice of semiconductor material and the proper oxide along with it. With the growing semiconductor technology, the traditional semiconductor now has the promising competitors like silicon carbide and gallium nitride.The simulation considers the calculation of minimum potential at the center plane of the FinFET channel through which roll-off of threshold voltage is measured. The analysis proves gallium nitride and silicon carbide as the most promising material for FinFET manufacturing industries. The drain to source voltage along with fin-height, fin thickness and channel length are varied keeping other parameters constant. The purpose of this work is to find out the “other than silicon” material in solid state device technology.