Thermal stability of various ball-limited-metal systems under solder bumps

K. Mizuishi, T. Mori
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引用次数: 12

Abstract

Thermal stability is discussed of ball-limited-metal (BLM) layers formed under controlled-collapse solder (lead-5 wt.% tin) bumps for flip-chip interconnections. All BLM systems used here consist of a triple-layer deposit of Cr or Ti as an adhesive; Ni, Mo, Pd, or Pt as a barrier; and Au as a surface metal. Using test chips with these BLM systems, mechanical pull-strength values of solder-bump joints are obtained. These values are associated with thermal phenomena at the interface between the BLM and solder layers. The chips with Ti adhesive layers show generally superior solder-joint strength to those with Cr layers, independently of the barrier metal used. This is due to the presence of a joint fracture mode closely related to the kind of adhesive metal. Among the BLM systems examined, Ti/Ni/Au is found to provide the most reliable solder joints. This is successfully utilized as a BLM system for GaAs devices.<>
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焊料凸点下各种限球金属系统的热稳定性
讨论了用于倒装芯片互连的在控制坍塌焊料(铅-5 wt.%锡)凸点下形成的球限金属(BLM)层的热稳定性。这里使用的所有BLM系统都由三层Cr或Ti沉积物作为粘合剂组成;Ni, Mo, Pd或Pt作为势垒;金作为表面金属。利用这些BLM系统的测试芯片,获得了焊接-碰撞接头的机械拉强度值。这些值与BLM和焊料层之间界面的热现象有关。与使用的障碍金属无关,具有Ti粘合层的芯片通常比具有Cr层的芯片具有更高的焊接强度。这是由于存在一种与粘接金属种类密切相关的接头断裂模式。在测试的BLM系统中,Ti/Ni/Au被发现提供最可靠的焊点。该系统已成功用于GaAs器件的BLM系统。
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