Tengteng Lei, Congwei Liao, Jie Huang, Ying Wang, Shengdong Zhang
{"title":"An a-InGaZnO TFT Gate Driver Circuit with Positive Feedback Effect","authors":"Tengteng Lei, Congwei Liao, Jie Huang, Ying Wang, Shengdong Zhang","doi":"10.1109/CAD-TFT.2018.8608053","DOIUrl":null,"url":null,"abstract":"An a-InGaZnO TFT integrated gate driver circuit with a new inverter is proposed. The inverter features positive feedback from the output electrode to the gate electrode of the pull-up transistor, for suppressing the leakage current and enhancing the pull-up ability. Compared with the conventional designs, the proposed gate driver exhibits extended Vth shift margin from −8 V to +9 V.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"31 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAD-TFT.2018.8608053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
An a-InGaZnO TFT integrated gate driver circuit with a new inverter is proposed. The inverter features positive feedback from the output electrode to the gate electrode of the pull-up transistor, for suppressing the leakage current and enhancing the pull-up ability. Compared with the conventional designs, the proposed gate driver exhibits extended Vth shift margin from −8 V to +9 V.
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