B. Shankar, Rahul Singh, R. Sengupta, H. Khand, Ankit Soni, Sayak Dutta Gupta, S. Raghavan, H. Gossner, M. Shrivastava
{"title":"Trap Assisted Stress Induced ESD Reliability of GaN Schottky Diodes","authors":"B. Shankar, Rahul Singh, R. Sengupta, H. Khand, Ankit Soni, Sayak Dutta Gupta, S. Raghavan, H. Gossner, M. Shrivastava","doi":"10.23919/EOS/ESD.2018.8509745","DOIUrl":null,"url":null,"abstract":"Electro-thermal behaviour and degradation of recessed GaN Schottky diode are studied under forward and reverse ESD stress. Impact of different surface treatments at Schottky interface, on trap generation and degradation is investigated. Evolution of mechanical stress and defects is probed using onthe-fly Raman spectroscopy. Distinct failure modes are discovered in each case.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EOS/ESD.2018.8509745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Electro-thermal behaviour and degradation of recessed GaN Schottky diode are studied under forward and reverse ESD stress. Impact of different surface treatments at Schottky interface, on trap generation and degradation is investigated. Evolution of mechanical stress and defects is probed using onthe-fly Raman spectroscopy. Distinct failure modes are discovered in each case.
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