{"title":"Properties of ZnTe:Cu thin films and CdS/CdTe/ZnTe solar cells","authors":"J. Tang, D. Mao, T. Ohno, V. Kaydanov, J. Trefny","doi":"10.1109/PVSC.1997.654122","DOIUrl":null,"url":null,"abstract":"The effects of Cu doping and post-deposition annealing on the properties of ZnTe thin films and CdS/CdTe solar cells with the ZnTe:Cu/Au back contact were investigated. The structural, compositional and electrical properties of ZnTe films were studied systematically using X-ray diffraction (XRD), electron microprobe analysis, atomic force microscopy (AFM), electrical resistivity and Hall effect measurements. ZnTe films with Cu concentrations of 1-6 at. % were used successfully as a back contact layer, providing fill factors over 0.70. The stability of CdTe/ZnTe/Au cells under accelerated temperature stress tests was investigated. I-V and C-V measurements, scanning Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy (XPS) were used to clarify possible degradation mechanisms. Significant Cu and Te diffusion into Au layer and Au diffusion into ZnTe were observed after annealing.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"34 9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
The effects of Cu doping and post-deposition annealing on the properties of ZnTe thin films and CdS/CdTe solar cells with the ZnTe:Cu/Au back contact were investigated. The structural, compositional and electrical properties of ZnTe films were studied systematically using X-ray diffraction (XRD), electron microprobe analysis, atomic force microscopy (AFM), electrical resistivity and Hall effect measurements. ZnTe films with Cu concentrations of 1-6 at. % were used successfully as a back contact layer, providing fill factors over 0.70. The stability of CdTe/ZnTe/Au cells under accelerated temperature stress tests was investigated. I-V and C-V measurements, scanning Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy (XPS) were used to clarify possible degradation mechanisms. Significant Cu and Te diffusion into Au layer and Au diffusion into ZnTe were observed after annealing.