COMSOL-Based Modeling and Simulation of ISFET pH Sensor Using Si02 Sensing Film

Salvir Hossain, Md Tawabur Rahman
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Abstract

The measurement of pH is an important routine practice in many chemical and biomedical applications. This work reports an Ion Sensitive Field Effect Transistors (ISFET) based pH sensor. The two-dimensional modeling of the sensor is performed in the COMSOL Multiphysics® v. 6.0 platform using its semiconductor module, electrostatics module, and transport of diluted species module. The binding of ions in Si02 results in induced charge carriers in the conducting channel of ISFET, which is controlled by the applied gate voltage for determining ion concentration. Here, the pH of water as the bulk electrolyte is measured by attaining the required gate voltage to achieve a certain drain current in ISFET. The sensor shows excellent sensitivities of 48.7 mV/pH and 41.3 mV/pH with linear detection ranges of pH 1–7 and 8–13, respectively. The excellent sensitivity and wide linear detection range can be attributed to the high concentration of surface sites in the Si02 sensing film and improved disassociation constants in the presence of the gate oxide in contact with the electrolyte. Finally, this sensor demonstrates its potential for real applications.
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基于comsol的Si02传感膜ISFET pH传感器建模与仿真
pH值的测量在许多化学和生物医学应用中是一项重要的常规实践。本文报道了一种基于离子敏感场效应晶体管(ISFET)的pH传感器。传感器的二维建模是在COMSOL Multiphysics®v. 6.0平台上使用其半导体模块、静电模块和稀释物质传输模块进行的。离子在sio2中的结合在ISFET的导电通道中产生感应载流子,并由外加的决定离子浓度的栅极电压控制。在这里,通过在ISFET中获得所需的栅极电压来测量作为散装电解质的水的pH值,以实现一定的漏极电流。该传感器具有良好的灵敏度,分别为48.7 mV/pH和41.3 mV/pH,线性检测范围分别为pH 1-7和8-13。优异的灵敏度和宽的线性检测范围可归因于二氧化硅传感膜中高浓度的表面位点和与电解质接触的栅极氧化物存在时解离常数的提高。最后,该传感器展示了其实际应用的潜力。
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