Field emission and other electron sources fabrication of dielectric layer in a novel triode structure CNT-fed

Qilong Wang, W. Lei, Zhu Zhua, Xiaobing Zhang, Y. Di, Jinchan Wang
{"title":"Field emission and other electron sources fabrication of dielectric layer in a novel triode structure CNT-fed","authors":"Qilong Wang, W. Lei, Zhu Zhua, Xiaobing Zhang, Y. Di, Jinchan Wang","doi":"10.1109/IVESC.2004.1414212","DOIUrl":null,"url":null,"abstract":"A new triode structure for printable carbon nanotube field emission displays is described in this paper. In the structure, silver paste is printed on the surface of a metal mesh and acts as the gate electrode. Between the gate and the metal mesh is a dielectric layer. MgO film and MgF/sub 2/ film are deposited on the surfaces of the mesh and the funnels by evaporation. A voltage applied on the metal mesh, the primary electrons emit from the CNT cathode and bombard on the surface of the metal mesh with initial energy. The secondary electrons and backscatters are generated. Because of the low energy of the secondary electrons, the gate can control the emission current easily. Therefore the range of the modulate voltage can be withdrawn. The dielectric layer on the surface of the metal mesh must be compact, otherwise silver paste will penetrate in after firing and under high voltage, breakdown of the insulator materials will occur by surface flashover. This paper reports the fabrication process of dielectric layer and the preparation of the materials.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVESC.2004.1414212","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A new triode structure for printable carbon nanotube field emission displays is described in this paper. In the structure, silver paste is printed on the surface of a metal mesh and acts as the gate electrode. Between the gate and the metal mesh is a dielectric layer. MgO film and MgF/sub 2/ film are deposited on the surfaces of the mesh and the funnels by evaporation. A voltage applied on the metal mesh, the primary electrons emit from the CNT cathode and bombard on the surface of the metal mesh with initial energy. The secondary electrons and backscatters are generated. Because of the low energy of the secondary electrons, the gate can control the emission current easily. Therefore the range of the modulate voltage can be withdrawn. The dielectric layer on the surface of the metal mesh must be compact, otherwise silver paste will penetrate in after firing and under high voltage, breakdown of the insulator materials will occur by surface flashover. This paper reports the fabrication process of dielectric layer and the preparation of the materials.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
新型三极管结构碳纳米管馈电介质层的场发射及其它电子源制备
介绍了一种新型的可打印碳纳米管场发射显示器三极管结构。在该结构中,银膏被印在金属网的表面并作为栅电极。栅极和金属网之间是一层介电层。MgO膜和MgF/ sub2 /膜通过蒸发沉积在网孔和漏斗表面。在金属网上施加电压,初级电子从碳纳米管阴极发射,并以初始能量轰击金属网表面。产生二次电子和后向散射。由于二次电子的能量较低,栅极可以很容易地控制发射电流。因此,调制电压的范围可以被撤回。金属网表面的介电层必须致密,否则银浆在烧制后,在高压下会渗透进来,造成绝缘子材料表面闪络击穿。本文报道了介质层的制备工艺及材料的制备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Numerical and experimental analysis of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications Study of the atomic and molecular radiation in shadow mask PDP Cathode unit with field emitter from carbon fiber Theoretical approach to the stoichiometric feature of field emission from Al/sub x/Ga/sub 1-x/N Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur passivation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1