Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs/lnP MQW laser diodes

J. Darja, S. Narata, N. Chen, Y. Nakano
{"title":"Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs/lnP MQW laser diodes","authors":"J. Darja, S. Narata, N. Chen, Y. Nakano","doi":"10.1109/NUSOD.2003.1259034","DOIUrl":null,"url":null,"abstract":"With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 /spl mu/m wavelength is illustrated. Prior to the actual simulation, the materials' parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1259034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 /spl mu/m wavelength is illustrated. Prior to the actual simulation, the materials' parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
利用器件模拟器结合正交阵列优化InAlGaAs/lnP MQW激光二极管的设计
借助器件模拟器,设计了1.3 /spl μ m波长下InAlGaAs/InP MQW激光二极管的最佳生长和工艺参数。在实际模拟之前,使用大面积InGaAlAs/InP激光二极管L-I测量结果校准了模拟中使用的材料参数。利用商业仿真软件LASTIP结合正交阵列(OAs)或田口法进行仿真,确定最优设计条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Simulation of all-optical flip-flops based on bistable laser diodes with nonlinear couplers Validation of SiC photodetectors response Theoretical analysis of the operating state of semiconductor lasers subject to strong optical feedback Ultra-broadband photonic simulators for passive and active components and systems Analysis of thermal response characteristics of semiconductor by self-consistent electro-opto-thermal simulation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1