{"title":"An X-Band Sampled-Line Impedance Sensor in 250-nm GaAs","authors":"D. Donahue, M. Roberg, Z. Popovic, T. Barton","doi":"10.1109/PAWR46754.2020.9035993","DOIUrl":null,"url":null,"abstract":"This paper describes the design and characterization of an X-band MMIC sampled-line impedance sensor. The network is intended for integration into a power amplifier (PA) in applications where load impedance varies, for example in phased arrays. Scalar power detectors placed along a transmission line perform a complex measurement of the load reflection coefficient. The X-band prototype in 250-nm GaAs demonstrates the ability to implement this technique in MMIC technology, as a step towards integration into a MMIC PA. In addition to characterization of the impedance measurement for reflection coefficient magnitudes up to 0.6, the sampled line is compared to a standard 50-ohm line in terms of loss, and a standalone sampler is measured.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PAWR46754.2020.9035993","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper describes the design and characterization of an X-band MMIC sampled-line impedance sensor. The network is intended for integration into a power amplifier (PA) in applications where load impedance varies, for example in phased arrays. Scalar power detectors placed along a transmission line perform a complex measurement of the load reflection coefficient. The X-band prototype in 250-nm GaAs demonstrates the ability to implement this technique in MMIC technology, as a step towards integration into a MMIC PA. In addition to characterization of the impedance measurement for reflection coefficient magnitudes up to 0.6, the sampled line is compared to a standard 50-ohm line in terms of loss, and a standalone sampler is measured.