Pub Date : 2020-01-01DOI: 10.1109/PAWR46754.2020.9035992
Chenyu Liang, Thaimí Niubó-Alemán, Yunsik Hahn, P. Roblin, J. Reynoso‐Hernández
This paper presents a two-way hybrid Doherty-outphasing power amplifier (HD-OPA) with an optimal efficiency. The HD-OPA consists of a main PA operating in class-F and an auxiliary PA operating in class-C which jointly operate in the Doherty mode at lower power and the outphasing mode at higher power. The peak to backoff fundamental drain voltage ratio of the auxiliary PA is optimized such that the main and auxiliary transistors both deliver their maximum power at peak power. As a result, the outphasing angles between the two inputs need to be changed dynamically with the dual-input power level. This concept is validated by a fabricated 2.08 GHz PA demonstrator circuit with a drain efficiency of 71.1 % at 8 dB backoff power and a drain efficiency of 74.6 % at 45.1 dBm peak power in continuous-wave measurements. When excited with a 20-MHz LTE signal with 9.55 dB peak-to-average-power-ratio, the HD-OPA yields an average efficiency of 56.7 %, average power-added-efficiency of 52.3 % and adjacent-channel-leakage-ratio of -49.0 dBc after linearization.
{"title":"Optimal Two-Way Hybrid Doherty-Outphasing Power Amplifier","authors":"Chenyu Liang, Thaimí Niubó-Alemán, Yunsik Hahn, P. Roblin, J. Reynoso‐Hernández","doi":"10.1109/PAWR46754.2020.9035992","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9035992","url":null,"abstract":"This paper presents a two-way hybrid Doherty-outphasing power amplifier (HD-OPA) with an optimal efficiency. The HD-OPA consists of a main PA operating in class-F and an auxiliary PA operating in class-C which jointly operate in the Doherty mode at lower power and the outphasing mode at higher power. The peak to backoff fundamental drain voltage ratio of the auxiliary PA is optimized such that the main and auxiliary transistors both deliver their maximum power at peak power. As a result, the outphasing angles between the two inputs need to be changed dynamically with the dual-input power level. This concept is validated by a fabricated 2.08 GHz PA demonstrator circuit with a drain efficiency of 71.1 % at 8 dB backoff power and a drain efficiency of 74.6 % at 45.1 dBm peak power in continuous-wave measurements. When excited with a 20-MHz LTE signal with 9.55 dB peak-to-average-power-ratio, the HD-OPA yields an average efficiency of 56.7 %, average power-added-efficiency of 52.3 % and adjacent-channel-leakage-ratio of -49.0 dBc after linearization.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"1978 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128842589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1109/PAWR46754.2020.9036005
Shuichi Sakata, Y. Komatsuzaki, S. Shinjo
This paper presents the formulation and experimental validation of adaptive input-power distribution in Doherty Power Amplifiers (DPAs) using modified Wilkinson Power Divider (WPD). It will be theoretically shown that ideal power-dependent power-distribution profile for Doherty operation can be obtained by just adjusting the isolation resistor in the divider when input reflection phase of the auxiliary amplifier in power-back off range are properly set. The proposed circuit was experimentally verified by fabricating a 3.5 GHz 32 W DPA using GaN HEMT devices. Experiments showed that, by optimizing the isolation resistor, ACLR improvement of 9 dB were obtained under 8.5 dB PAPR 10 MHz LTE signal. The optimized DPA based on this technique showed an average drain efficiency of 55 % and ACLR of −50 dBc using the same signal after Digital Pre-Distortion (DPD).
{"title":"Adaptive Input-Power Distribution in Doherty Power Amplifier using Modified Wilkinson Power Divider","authors":"Shuichi Sakata, Y. Komatsuzaki, S. Shinjo","doi":"10.1109/PAWR46754.2020.9036005","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9036005","url":null,"abstract":"This paper presents the formulation and experimental validation of adaptive input-power distribution in Doherty Power Amplifiers (DPAs) using modified Wilkinson Power Divider (WPD). It will be theoretically shown that ideal power-dependent power-distribution profile for Doherty operation can be obtained by just adjusting the isolation resistor in the divider when input reflection phase of the auxiliary amplifier in power-back off range are properly set. The proposed circuit was experimentally verified by fabricating a 3.5 GHz 32 W DPA using GaN HEMT devices. Experiments showed that, by optimizing the isolation resistor, ACLR improvement of 9 dB were obtained under 8.5 dB PAPR 10 MHz LTE signal. The optimized DPA based on this technique showed an average drain efficiency of 55 % and ACLR of −50 dBc using the same signal after Digital Pre-Distortion (DPD).","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124868976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1109/PAWR46754.2020.9035994
William Sear, Adam Der, T. Barton
In this paper we investigate the effect of amplifier input matching on the noise figure, gain, and linearity design tradeoff, with the goal of developing a single-amplifier solution able to operate as either a PA or LNA. We evaluate the large-signal linearity performance of an amplifier with a noise-matched input compared to an identical amplifier with gain-matched input, and the effects on efficiency and noise figure. The prototype amplifier is designed at 3 GHz and realizes 42.86 dBm CW output power and 67% PAE at 3 dB gain compression. With a noise-matched input the amplifier realizes a 2 dB reduction in gain and 7.7 percentage point reduction in PAE compared to the gain-matched amplifier, but a 3 dB improvement in IMD3 at 33.5 dBm output power under a 1-MHz spaced two-tone signal excitation.
{"title":"Amplifier Input Matching for NF-Gain-Linearity Compromise","authors":"William Sear, Adam Der, T. Barton","doi":"10.1109/PAWR46754.2020.9035994","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9035994","url":null,"abstract":"In this paper we investigate the effect of amplifier input matching on the noise figure, gain, and linearity design tradeoff, with the goal of developing a single-amplifier solution able to operate as either a PA or LNA. We evaluate the large-signal linearity performance of an amplifier with a noise-matched input compared to an identical amplifier with gain-matched input, and the effects on efficiency and noise figure. The prototype amplifier is designed at 3 GHz and realizes 42.86 dBm CW output power and 67% PAE at 3 dB gain compression. With a noise-matched input the amplifier realizes a 2 dB reduction in gain and 7.7 percentage point reduction in PAE compared to the gain-matched amplifier, but a 3 dB improvement in IMD3 at 33.5 dBm output power under a 1-MHz spaced two-tone signal excitation.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129454658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1109/PAWR46754.2020.9036000
K. Chuang
Over the past two decades there has been much interest in the use of signal processing techniques to enhance the RF performance of non-linear wireless systems. This paper presents the challenges and requirements for a wide range of modern telecommunication applications from cellular mobile devices to wireless infrastructure and base stations. We shall also consider how the overall linearization system architecture is influenced by the design choices and application requirements. More specifically, we will compare and analyze different digital pre-distortion techniques, including direct-form polynomials, orthogonal polynomials, piecewise polynomials, and basis spline functions that are suitable for various wireless radio applications. Experimental results are presented along with discussions of advantages and drawbacks for each method in details.
{"title":"A Perspective on Linearization and Digital Pre-Distortion for Wireless Radio Systems","authors":"K. Chuang","doi":"10.1109/PAWR46754.2020.9036000","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9036000","url":null,"abstract":"Over the past two decades there has been much interest in the use of signal processing techniques to enhance the RF performance of non-linear wireless systems. This paper presents the challenges and requirements for a wide range of modern telecommunication applications from cellular mobile devices to wireless infrastructure and base stations. We shall also consider how the overall linearization system architecture is influenced by the design choices and application requirements. More specifically, we will compare and analyze different digital pre-distortion techniques, including direct-form polynomials, orthogonal polynomials, piecewise polynomials, and basis spline functions that are suitable for various wireless radio applications. Experimental results are presented along with discussions of advantages and drawbacks for each method in details.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123439167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1109/PAWR46754.2020.9036002
Songhui Li, M. V. Thayyil, C. Carta, F. Ellinger
This work presents a power amplifier (PA) operating from 12 GHz to 46 GHz implemented in a 130 nm- SiGe-BiCMOS technology. The circuit employs an improved distributed topology with stacked transistor gain cells and output termination with large resistance to simultaneously improve gain and output power. A transmission line is introduced to avoid the use of external bias-tee for the DC power supply. Measurements of the fabricated chips show a peak gain of 18.3 dB, a maximum saturated output power of 20.9dBm, a maximum 1-dB compressed output power of 19.2dBm and a peak power added efficiency of 14.5 %. To the best knowledge of the authors, the presented PA has the best combination of output power, power gain and power bandwidth among the reported broadband PAs in silicon based technologies.
{"title":"A 12 GHz to 46 GHz Fully Integrated SiGe Distributed Power Amplifier with 20.9 dBm Output Power and 18.3 dB Gain","authors":"Songhui Li, M. V. Thayyil, C. Carta, F. Ellinger","doi":"10.1109/PAWR46754.2020.9036002","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9036002","url":null,"abstract":"This work presents a power amplifier (PA) operating from 12 GHz to 46 GHz implemented in a 130 nm- SiGe-BiCMOS technology. The circuit employs an improved distributed topology with stacked transistor gain cells and output termination with large resistance to simultaneously improve gain and output power. A transmission line is introduced to avoid the use of external bias-tee for the DC power supply. Measurements of the fabricated chips show a peak gain of 18.3 dB, a maximum saturated output power of 20.9dBm, a maximum 1-dB compressed output power of 19.2dBm and a peak power added efficiency of 14.5 %. To the best knowledge of the authors, the presented PA has the best combination of output power, power gain and power bandwidth among the reported broadband PAs in silicon based technologies.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129898658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1109/PAWR46754.2020.9035998
C. Crespo-Cadenas, M. J. Madero-Ayora, Juan A. Becerra
This work presents a novel power amplifier behavioral model, referred to as power dependent Volterra (PDV) model, which is devoted to keep track on the average power of the input signal. The behavior of the parameters under varying power conditions is theoretically investigated using circuit-level knowledge including electrical and thermal subcircuits, and the dependence on average power is demonstrated. Experimental results employing a GaN HEMT power amplifier show that the model performance at $mathrm{P}_{mathrm{o}}=+33.8mathrm{dBm}$ is maintained over a range of about 15 dB.
{"title":"On the power level dependence of PA and DPD Volterra models","authors":"C. Crespo-Cadenas, M. J. Madero-Ayora, Juan A. Becerra","doi":"10.1109/PAWR46754.2020.9035998","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9035998","url":null,"abstract":"This work presents a novel power amplifier behavioral model, referred to as power dependent Volterra (PDV) model, which is devoted to keep track on the average power of the input signal. The behavior of the parameters under varying power conditions is theoretically investigated using circuit-level knowledge including electrical and thermal subcircuits, and the dependence on average power is demonstrated. Experimental results employing a GaN HEMT power amplifier show that the model performance at $mathrm{P}_{mathrm{o}}=+33.8mathrm{dBm}$ is maintained over a range of about 15 dB.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128970655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1109/PAWR46754.2020.9035999
R. Quaglia, A. Piacibello, F. Costanzo, R. Giofré, M. Casbon, R. Leblanc, V. Valenta, V. Camarchia
This paper presents the source/load-pull characterisation of GaN HEMTs on Si substrate, with an analysis of the measurement data oriented to aid the design of Doherty power amplifiers for satellite communication applications in the 17–20 GHz band. In particular, fundamental load-pull, in both class AB and C, is used to identify the output power and efficiency contours and assess the scalability of the performance vs. device size. Second harmonic source/load-pull data is used to determine the harmonic impedance regions to avoid during matching network synthesis. The load-pull data allows to predict the optimum load modulation trajectory to be synthesised in the design phase and the associated performance in terms of efficiency, gain compression and phase distortion.
{"title":"Source/Load-Pull Characterisation of GaN on Si HEMTs with Data Analysis Targeting Doherty Design","authors":"R. Quaglia, A. Piacibello, F. Costanzo, R. Giofré, M. Casbon, R. Leblanc, V. Valenta, V. Camarchia","doi":"10.1109/PAWR46754.2020.9035999","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9035999","url":null,"abstract":"This paper presents the source/load-pull characterisation of GaN HEMTs on Si substrate, with an analysis of the measurement data oriented to aid the design of Doherty power amplifiers for satellite communication applications in the 17–20 GHz band. In particular, fundamental load-pull, in both class AB and C, is used to identify the output power and efficiency contours and assess the scalability of the performance vs. device size. Second harmonic source/load-pull data is used to determine the harmonic impedance regions to avoid during matching network synthesis. The load-pull data allows to predict the optimum load modulation trajectory to be synthesised in the design phase and the associated performance in terms of efficiency, gain compression and phase distortion.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122459589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a study of thermal-memory effect reduction for multi-level pulse-modulated polar transmitters (PMPTs). PMPTs using single-level pulse modulation have shown to have minimal memory effects even when operated at high power levels. In this paper, thermal simulation with different levels of pulses was performed to study the effects of multi-level pulse modulation. Simulation results show that the multi-level pulse signal has the potential to reduce heat from base station power amplifier.
{"title":"The thermal memory effect reduction of 5G base station power amplifier using multilevel pulse modulation","authors":"Tzu-Han Wang, Yu-Ting Lin, Shuo-Heng Xu, You-Huei Chen, Jau-Horng Chen","doi":"10.1109/PAWR46754.2020.9036007","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9036007","url":null,"abstract":"This paper presents a study of thermal-memory effect reduction for multi-level pulse-modulated polar transmitters (PMPTs). PMPTs using single-level pulse modulation have shown to have minimal memory effects even when operated at high power levels. In this paper, thermal simulation with different levels of pulses was performed to study the effects of multi-level pulse modulation. Simulation results show that the multi-level pulse signal has the potential to reduce heat from base station power amplifier.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122666716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1109/PAWR46754.2020.9035997
P. Gilabert, D. Vegas, Zhixiong Ren, G. Montoro, Jose R. Perez-Cisneros, M. Ruiz, Xiaoshu Si, Jose A. Garcia
This paper presents a holistic approach to design and linearize a wideband outphasing power amplifier (PA) to efficiently amplify a 200 MHz bandwidth (BW) signal compliant with the Data Over Cable Service Interface Specification (DOCSIS) standard. The proposed outphasing PA, based on a load insensitive GaN HEMT class-E topology, was designed to face the trade-off between the output power control range to be covered with high efficiency and the desired BW. Operated following an isogain approach, the linearity performance is ensured by applying digital predistortion linearization, which combined with crest factor reduction (CFR) techniques can enhance the overall power efficiency. An 18.7% average efficiency has been measured when fitting the standard in-band and out-of-band linearity requirements for a 26.3 dBm 64 QAM DOCSIS signal with 12.2 dB of PAPR.
{"title":"Design and Digital Predistortion Linearization of a Wideband Outphasing Amplifier Supporting 200 MHz Bandwidth","authors":"P. Gilabert, D. Vegas, Zhixiong Ren, G. Montoro, Jose R. Perez-Cisneros, M. Ruiz, Xiaoshu Si, Jose A. Garcia","doi":"10.1109/PAWR46754.2020.9035997","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9035997","url":null,"abstract":"This paper presents a holistic approach to design and linearize a wideband outphasing power amplifier (PA) to efficiently amplify a 200 MHz bandwidth (BW) signal compliant with the Data Over Cable Service Interface Specification (DOCSIS) standard. The proposed outphasing PA, based on a load insensitive GaN HEMT class-E topology, was designed to face the trade-off between the output power control range to be covered with high efficiency and the desired BW. Operated following an isogain approach, the linearity performance is ensured by applying digital predistortion linearization, which combined with crest factor reduction (CFR) techniques can enhance the overall power efficiency. An 18.7% average efficiency has been measured when fitting the standard in-band and out-of-band linearity requirements for a 26.3 dBm 64 QAM DOCSIS signal with 12.2 dB of PAPR.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116923531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.1109/PAWR46754.2020.9036004
Luis Álvarez-López, Juan A. Becerra, M. J. Madero-Ayora, C. Crespo-Cadenas
This work presents the application of the Random Forest technique to behavioral modeling component selection. Several digital predistorters (DPDs) with a random structure are attained to obtain a sequence of the regressors importance with respect to their impact in the linearization error of a power amplifier (PA). The approach has been validated in the DPD of a commercial PA operating under a 5G-NR signal, showcasing the ability of the algorithm to sort and prune the components.
{"title":"Determining a Digital Predistorter Model Structure for Wideband Power Amplifiers through Random Forest","authors":"Luis Álvarez-López, Juan A. Becerra, M. J. Madero-Ayora, C. Crespo-Cadenas","doi":"10.1109/PAWR46754.2020.9036004","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9036004","url":null,"abstract":"This work presents the application of the Random Forest technique to behavioral modeling component selection. Several digital predistorters (DPDs) with a random structure are attained to obtain a sequence of the regressors importance with respect to their impact in the linearization error of a power amplifier (PA). The approach has been validated in the DPD of a commercial PA operating under a 5G-NR signal, showcasing the ability of the algorithm to sort and prune the components.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122271795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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