T. Frank, C. Chappaz, L. Arnaud, X. Federspiel, F. Colella, E. Petitprez, L. Anghel
{"title":"Electromigration degradation mechanism analysis of SnAgCu interconnects for eWLB package","authors":"T. Frank, C. Chappaz, L. Arnaud, X. Federspiel, F. Colella, E. Petitprez, L. Anghel","doi":"10.1109/IRPS.2012.6241792","DOIUrl":null,"url":null,"abstract":"This paper focuses on electromigration of SnAgCu interconnects of Fanout embedded Wafer Level Ball Grid Array (FO-eWLB) technology. Black's parameters are analyzed regarding stage of degradation through approaches based on resistance slope modeling and on Failure Criterion (FC).","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241792","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper focuses on electromigration of SnAgCu interconnects of Fanout embedded Wafer Level Ball Grid Array (FO-eWLB) technology. Black's parameters are analyzed regarding stage of degradation through approaches based on resistance slope modeling and on Failure Criterion (FC).
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