{"title":"Optimizing of the material structure in AlGaN/GaN HEMTs through the energy band engineering approach","authors":"Miao Zhao, Xinyu Liu, Yingkui Zheng, Wei Ke","doi":"10.1109/MMWCST.2012.6238138","DOIUrl":null,"url":null,"abstract":"The performance of 2DEG in AlGaN/GaN HEMTs was investigated using the self-consistent solution of Poisson and Schrödinger equations, which in the simulation, the effects of the spontaneous and piezoelectric polarization were included. An optimized structure with cap layer yielded an increase in effective barrier height, with little penalty in sheet carrier concentration. The structure due to AlN interlayer was investigated by using the energy band calculation.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"273 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMWCST.2012.6238138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The performance of 2DEG in AlGaN/GaN HEMTs was investigated using the self-consistent solution of Poisson and Schrödinger equations, which in the simulation, the effects of the spontaneous and piezoelectric polarization were included. An optimized structure with cap layer yielded an increase in effective barrier height, with little penalty in sheet carrier concentration. The structure due to AlN interlayer was investigated by using the energy band calculation.
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