M. Vidojkovic, M. Sanduleanu, J. D. V. Tang, P. Baltus, A. Roermund
{"title":"A broadband, inductorless LNA for multi-standard aplications","authors":"M. Vidojkovic, M. Sanduleanu, J. D. V. Tang, P. Baltus, A. Roermund","doi":"10.1109/ECCTD.2007.4529586","DOIUrl":null,"url":null,"abstract":"In this paper a novel broadband, inductor-less, resistive-feedback, CMOS LNA is presented. The amplifier is designed for the frequency band 0.3 GHz-2 GHz. The measured voltage gain of the implemented LNA is 12 dB at 1 GHz and the 3 dB bandwidth is 2 GHz. An IIP3 of -16 dBm and a noise figure of 4 dB are measured at 900 MHz. The value of the measured IIP2 is -13 dBm. The Sll is better than -10 dB in the frequency band from 300 MHz up to 1 GHz. The power dissipation is 18 mW from a 1.2 V supply. The circuit is designed in a digital CMOS 90 nm low power (LP) process without extra process options.","PeriodicalId":445822,"journal":{"name":"2007 18th European Conference on Circuit Theory and Design","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 18th European Conference on Circuit Theory and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2007.4529586","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
In this paper a novel broadband, inductor-less, resistive-feedback, CMOS LNA is presented. The amplifier is designed for the frequency band 0.3 GHz-2 GHz. The measured voltage gain of the implemented LNA is 12 dB at 1 GHz and the 3 dB bandwidth is 2 GHz. An IIP3 of -16 dBm and a noise figure of 4 dB are measured at 900 MHz. The value of the measured IIP2 is -13 dBm. The Sll is better than -10 dB in the frequency band from 300 MHz up to 1 GHz. The power dissipation is 18 mW from a 1.2 V supply. The circuit is designed in a digital CMOS 90 nm low power (LP) process without extra process options.