{"title":"Improving breakdown voltage of double-channel E-mode AlGaN/GaN HEMTs using a double-gate structure","authors":"Yang-Hua Chang, Chien-min Wang","doi":"10.1109/EDSSC.2017.8355947","DOIUrl":null,"url":null,"abstract":"In this study, the characteristics of a double-channel AlGaN/GaN HEMT are improved. Firstly, depletion mode is changed to enhancement mode by changing the thickness of an AlGaN layer, implementing a p-doped region, and changing the material of buffer layer. Secondly, Al ratio in the upper AlGaN layer is optimized to improve the flatness of Gm-VGS curve so that the linearity is improved. Finally, breakdown voltage is increased by using a double-gate structure.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8355947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, the characteristics of a double-channel AlGaN/GaN HEMT are improved. Firstly, depletion mode is changed to enhancement mode by changing the thickness of an AlGaN layer, implementing a p-doped region, and changing the material of buffer layer. Secondly, Al ratio in the upper AlGaN layer is optimized to improve the flatness of Gm-VGS curve so that the linearity is improved. Finally, breakdown voltage is increased by using a double-gate structure.
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