RAM and TCAM designs by using STT-MRAM

Abstract

Spin-transfer torque magnetic random access memory (STT-MRAM) is a prospective candidate for cache and main memory designs. However, the reliable revision of magnetization using current requires high current density, which is hardly affordable in aggressive scaling-down technology node. Nanoring shaped magnetic tunneling junction (NR-MTJ) remarkably reduces STT programming current density, as indicated by theoretical analysis. In this paper, we first introduce the fundamental of STT technology and describe the NR-MTJ's structure and characteristics. The design and implementation of a 4Kb STTMRAM with NR-MTJs, and a TCAM design for high speed and robustness are then demonstrated.