P. Tu, Peng Wang, Xiaolei Hu, Chen Qi, S. Yin, M. Zagrodnik
{"title":"Analytical evaluation of IGBT turn-on loss with double pulse testing","authors":"P. Tu, Peng Wang, Xiaolei Hu, Chen Qi, S. Yin, M. Zagrodnik","doi":"10.1109/ICIEA.2016.7603721","DOIUrl":null,"url":null,"abstract":"Traditional IGBT turn-on loss evaluation methods are curve fitting of double pulse test data without insight of IGBT turn-on process. This paper proposed an analytical evaluation method of IGBT turn-on loss. In the proposed method, a qualitative IGBT switching waveform and an IGBT switching trajectory in output characteristics are used to analyze IGBT turn-on process. The detailed expressions for turn-on process are derived from an IGBT equivalent circuit model. IGBT switching transients governing equations to model IGBT turn-on loss are simplified. The turn-on loss estimated with the proposed expressions matched reasonably well with the experimental measurements.","PeriodicalId":283114,"journal":{"name":"2016 IEEE 11th Conference on Industrial Electronics and Applications (ICIEA)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 11th Conference on Industrial Electronics and Applications (ICIEA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIEA.2016.7603721","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
Traditional IGBT turn-on loss evaluation methods are curve fitting of double pulse test data without insight of IGBT turn-on process. This paper proposed an analytical evaluation method of IGBT turn-on loss. In the proposed method, a qualitative IGBT switching waveform and an IGBT switching trajectory in output characteristics are used to analyze IGBT turn-on process. The detailed expressions for turn-on process are derived from an IGBT equivalent circuit model. IGBT switching transients governing equations to model IGBT turn-on loss are simplified. The turn-on loss estimated with the proposed expressions matched reasonably well with the experimental measurements.