{"title":"Modeling of MOSFETs parameters and volt-ampere characteristics in a wide temperature range for low noise amplifiers design","authors":"A. Pilipenko, V. Biryukov","doi":"10.1109/EWDTS.2014.7027065","DOIUrl":null,"url":null,"abstract":"The temperature dependencies of the basic parameters of MOSFETs in a temperature range 20 - 300 K are measured. The universal formal four-parametric model, which allows to approximate all experimental temperature dependencies with the relative error less than 1% is proposed. The hybrid analytical model efficiency for approximation of volt-ampere characteristics of MOSFETs is proved.","PeriodicalId":272780,"journal":{"name":"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)","volume":"403 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2014.7027065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The temperature dependencies of the basic parameters of MOSFETs in a temperature range 20 - 300 K are measured. The universal formal four-parametric model, which allows to approximate all experimental temperature dependencies with the relative error less than 1% is proposed. The hybrid analytical model efficiency for approximation of volt-ampere characteristics of MOSFETs is proved.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
