{"title":"Nanometer scaled magnetic tunnel junctions fabricated by a substrate biased plasma etching technique","authors":"K. lee, J.Y. Chang, S.H. Han, K. Shin, W. Lee","doi":"10.1109/INTMAG.2005.1464424","DOIUrl":null,"url":null,"abstract":"SiO/sub 2//Ta(50 /spl Aring/)/Ni/sub 81/Fe/sub 19/(60 /spl Aring/)/Fe/sub 50/Mn/sub 50/(80 /spl Aring/)/FM/sub BOTTOM/(40 /spl Aring/)/Al/sub 2/O/sub 3/(12-16 /spl Aring/)/FM/sub TOP/(100 /spl Aring/)/Ta(20 /spl Aring/) are prepared on a thermally oxidized Si(100) substrate. FM layer used is Ni/sub 81/Fe/sub 19/ or Co/sub 84/Fe/sub 16/. The effect of substrate-biased plasma etching process on magnetotransport properties in magnetic tunnel junctions compared to that of the device prepared by a conventional way is investigated. Several properties such as TMR ratio and junction resistance, magnetization switching behavior of the MTJs are also investigated.","PeriodicalId":273174,"journal":{"name":"INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTMAG.2005.1464424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
SiO/sub 2//Ta(50 /spl Aring/)/Ni/sub 81/Fe/sub 19/(60 /spl Aring/)/Fe/sub 50/Mn/sub 50/(80 /spl Aring/)/FM/sub BOTTOM/(40 /spl Aring/)/Al/sub 2/O/sub 3/(12-16 /spl Aring/)/FM/sub TOP/(100 /spl Aring/)/Ta(20 /spl Aring/) are prepared on a thermally oxidized Si(100) substrate. FM layer used is Ni/sub 81/Fe/sub 19/ or Co/sub 84/Fe/sub 16/. The effect of substrate-biased plasma etching process on magnetotransport properties in magnetic tunnel junctions compared to that of the device prepared by a conventional way is investigated. Several properties such as TMR ratio and junction resistance, magnetization switching behavior of the MTJs are also investigated.
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