High performance 300 V IGBTs

Abstract

In this paper, we report for the first time, the measured characteristics of a low loss, high speed IGBT designed for 300 V operation. The optimized 300 V IGBTs exhibit a low Vce/sub (sat)/ of 1.35 V and an extremely fast fall time of less than 20 ns at a current density of 120 A/cm/sup 2/ and a junction temperature of 150/spl deg/C. This extremely fast switching results in an E/sub off/ of less than 5 /spl mu/J/A at 150/spl deg/C which is comparable to that of a MOSFET. The IGBT has a maximum operating frequency of greater than 400 kHz at rated current. These new 300 V IGBTs exhibit lower total losses than a 250 V MOSFET at operating frequencies as high as 350 kHz. The IGBT is also optimized for UIS capability and has a single pulse avalanche energy capability in excess of 3 J/cm/sup 2/ at rated current.