W. Qi, B. Li, G. Jiang, Z. Gu, T. Kwok, R.J. Zhang, P. Chu
{"title":"Observation of solid phase epitaxial growth of amorphous SiGe on Si(100) substrate","authors":"W. Qi, B. Li, G. Jiang, Z. Gu, T. Kwok, R.J. Zhang, P. Chu","doi":"10.1109/TENCON.1995.496425","DOIUrl":null,"url":null,"abstract":"The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si/sub 1-x/Ge/sub x//Si can be achieved with different compositions through high temperature thermal processes such as boron diffusion, annealing and oxidation.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"23 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496425","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The solid phase hetero-epitaxial growth of amorphous SiGe on Si(100) substrate has been investigated in this paper. The experimental results indicate that the solid phase epitaxy of the heterostructure Si/sub 1-x/Ge/sub x//Si can be achieved with different compositions through high temperature thermal processes such as boron diffusion, annealing and oxidation.
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