A compact low-power eDRAM-based NoC buffer

Cheng Li, P. Ampadu
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引用次数: 19

Abstract

Whereas buffers significantly impact Network-on-Chip (NoC) performance, they also account for up to 75% and nearly 50% of NoC router area and power respectively. Traditionally, SRAM has been used as an area and power efficient implementation of the router buffer. However, motivated by the smaller size and lower-power potential of planar embedded DRAM (eDRAM), we implement the router buffer using a 3T NMOS eDRAM for improved power and area efficiency. We demonstrate that the lifetime of flits stalled in the NoC router buffer is much shorter than the retention time of currently available eDRAM. This observation allows us to make the appropriate trade-off in size and sense-amplifier complexity to meet requirements of power and performance. A low-overhead need-based refresh mechanism is further explored. With a conservative buffer design using 65nm CMOS technology, our method reduces buffer area by up to 52% and power by 43%, while maintaining performance similar to a SRAM-based buffer. In a NoC router with 128-bit channel width, we achieve 26% and 11% reduction of total router area and power respectively. We conclude that eDRAM-based buffer is a power and area efficient alternative to SRAM-based buffer for NoC router design.
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一种紧凑的低功耗edram NoC缓冲器
虽然缓冲区对片上网络(NoC)性能有显著影响,但它们也分别占NoC路由器面积和功耗的75%和近50%。传统上,SRAM一直被用作路由器缓冲区的面积和功率效率实现。然而,由于平面嵌入式DRAM (eDRAM)具有更小的尺寸和更低的功耗潜力,我们使用3T NMOS eDRAM实现路由器缓冲器,以提高功率和面积效率。我们证明了在NoC路由器缓冲区中停滞的flits的寿命比当前可用的eDRAM的保留时间短得多。这一观察结果使我们能够在尺寸和感测放大器复杂性方面做出适当的权衡,以满足功率和性能的要求。进一步探索了一种低开销的基于需求的刷新机制。采用65nm CMOS技术的保守缓冲器设计,我们的方法将缓冲器面积减少了52%,功耗减少了43%,同时保持了与基于sram的缓冲器相似的性能。在128位信道宽度的NoC路由器中,我们实现了总路由器面积和功耗分别减少26%和11%。我们得出结论,基于edram的缓冲器是NoC路由器设计中基于sram的缓冲器的功耗和面积效率更高的替代方案。
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