M. Ghannam, A. Al Omar, G. Flamand, N. Posthuma, J. Poortmans, R. Mertens
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引用次数: 0
Abstract
Band-gap narrowing (BGN) is determined in heavily doped n-type GaAs and n-type Ga/sub 0.5/In/sub 0.5/P from experimental pn junction solar cell performance. A BGN of 82 meV and of 17 meV is determined in GaAs with an n-type doping concentration of 2/spl times/10/sup 18//cm/sup 3/ and 10/sup 17//cm/sup 3/, respectively, and an average 95 meV BGN is determined in Ga/sub 0.5/In/sub 0.5/P with an n-type doping concentration of 3/spl times/10/sup 18//cm/sup 3/. These values agree well with theoretical predictions of a recent model applied to n-type GaAs and adapted here for Ga/sub 0.5/In/sub 0.5/P.
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