{"title":"Highly-reliable, high-performance 1.3 /spl mu/m low-cost laser diodes for fiber-to-the-home applications","authors":"M.C. Wang, W. Lin, C. Chang, H. Liao, Y. Tu","doi":"10.1109/LEOS.1996.571966","DOIUrl":null,"url":null,"abstract":"The high cost of laser transmitters has prevented the realization of FTTH in the foreseeable future. The authors have developed high-performance 1.3 /spl mu/m laser diodes which have the potential to render the high-cost components inside the transmitter dispensable and greatly reduce the cost of transmitters. Low-cost fabrication, tight lot-to-lot control, excellent device yield, and uniform parameter distributions have been simultaneously achieved. With further structure and process optimizations, we have reduced threshold currents to as low as 6 mA at 25/spl deg/C, while maintaining high T/sub 0/ of 85 K.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.571966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The high cost of laser transmitters has prevented the realization of FTTH in the foreseeable future. The authors have developed high-performance 1.3 /spl mu/m laser diodes which have the potential to render the high-cost components inside the transmitter dispensable and greatly reduce the cost of transmitters. Low-cost fabrication, tight lot-to-lot control, excellent device yield, and uniform parameter distributions have been simultaneously achieved. With further structure and process optimizations, we have reduced threshold currents to as low as 6 mA at 25/spl deg/C, while maintaining high T/sub 0/ of 85 K.