H. A. Hamid, M. Abdullah, A. Aziz, N. Al-Hardan, S. A. Rosli
{"title":"Effect of N2 and O2 Anneal Gas Ratio For Low Resistance p - Type ZnO Formation","authors":"H. A. Hamid, M. Abdullah, A. Aziz, N. Al-Hardan, S. A. Rosli","doi":"10.1109/SMELEC.2006.381112","DOIUrl":null,"url":null,"abstract":"P - type conduction in ZnO thin films was realized by codoping method. ZnO thin films were prepared on silicon (111) substrates by DC magnetron sputtering using pure zinc disk as target and underwent heat treatment at 300degC for 1 hr. Results indicated that the co doped p - type ZnO had the lowest resistivity of 3.412 times 10-3 Omega.cm with a carrier concentration of 1.54 times 1022 cm-3.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"27 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.381112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
P - type conduction in ZnO thin films was realized by codoping method. ZnO thin films were prepared on silicon (111) substrates by DC magnetron sputtering using pure zinc disk as target and underwent heat treatment at 300degC for 1 hr. Results indicated that the co doped p - type ZnO had the lowest resistivity of 3.412 times 10-3 Omega.cm with a carrier concentration of 1.54 times 1022 cm-3.
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