Photophysics of blue quantum emitters in hexagonal Boron Nitride

Ivan Zhigulin, Karin Yamamura, Viktor Iv'ady, A. Gale, J. Horder, C. Lobo, M. Kianinia, M. Toth, I. Aharonovich
{"title":"Photophysics of blue quantum emitters in hexagonal Boron Nitride","authors":"Ivan Zhigulin, Karin Yamamura, Viktor Iv'ady, A. Gale, J. Horder, C. Lobo, M. Kianinia, M. Toth, I. Aharonovich","doi":"10.1088/2633-4356/acb87f","DOIUrl":null,"url":null,"abstract":"\n Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials for Quantum Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2633-4356/acb87f","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
六方氮化硼中蓝色量子发射体的光物理学
六方氮化硼(hBN)的色中心已成为集成量子光子学的有趣竞争者。在这项工作中,我们对在蓝色光谱范围内发射的hBN单发射器进行了详细的光物理分析。在不同的电子束辐照和退火条件下制备出以436nm为中心的窄带发光器件。光子统计和严格的光动力学分析揭示了发射器的势能级结构,这表明缺乏亚稳态,并得到理论分析的支持。潜在缺陷可以是hBN带隙下半部分缺陷状态被完全占据,带隙上半部分缺陷状态为空的电子结构。总的来说,我们的结果对于理解hBN中新兴蓝色量子发射体家族的光物理特性作为可扩展量子光子应用的潜在来源非常重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Nitrogen-vacancy centers in diamond: discovery of additional electronic states Fabrication of tips for scanning probe magnetometry by diamond growth GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots Quantum materials engineering by structured cavity vacuum fluctuations Structural formation yield of GeV centers from implanted Ge in diamond
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1