{"title":"Characterization of split-gate flash memory devices: reliability, gate-disturbance and capacitive coupling coefficients","authors":"D.M. Kim, Y. Jun, Y. Sohn, J. Kim, I. Choi","doi":"10.1109/TENCON.1995.496439","DOIUrl":null,"url":null,"abstract":"The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"167 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The split-gate flash memory device is characterized. The oxide breakdown due to cumulative electron tunneling, viz. repeated erasure is investigated with the use of current injection experiments. The results are correlated with the observed device cycling behaviour. Also data for the gate disturbance, programming efficiency and capacitive coupling coefficients are presented and discussed.
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