Se-Kyung Oh, Ying-Ying Zhang, H. Shin, I. Han, H. Kwon, Byoungchul Park, Sang-Uk Park, J. Bok, Ga-Won Lee, Jin-Suk Wang, H. Lee
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引用次数: 1
Abstract
In this article, we investigated the fabrication and characteristics of Pd germanide Schottky contacts on n-type Ge substrate. It is shown that the lowest sheet resistance and uniform Pd germanide can be obtained by a one step RTP at 400 °C for 30 sec. The proposed Pd germanide/nGe contact exhibited electron Schottky barrier height and work function of 0.565~0.577 eV and 4.695~4.702 eV, respectively. Therefore, the proposed Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.
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