Influence of packaging on frequency drift in MEMS resonators-Dynamic effect of packaging on MEMS device performance

T. Nishida, Y. Higo, H. Tanigawa, K. Suzuki
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引用次数: 2

Abstract

In order to clarify the source of resonant frequency drift in MEMS resonators, thermal expansion effect of packaging on MEMS devices was investigated. The strain in a silicon plate bonded on an aluminum plate with temperature was precisely measured. Increasing amount of strain in the aluminum plate was as large as 200 micro-strain with increase in only 20 degrees of temperature. The strain in the silicon plate was in a same order of change, however, compressive. Thermal expansion coefficient in Al is approximately ten times of that in Si. The reason of the opposite tendency in strain was speculated to be caused by bending in a Si-Al plate.
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封装对MEMS谐振器频率漂移的影响——封装对MEMS器件性能的动态影响
为了弄清MEMS谐振器谐振频率漂移的来源,研究了封装对MEMS器件的热膨胀效应。本文精确测量了硅板与铝板粘结后的应变随温度的变化。当温度仅升高20℃时,铝板应变增加量可达200微应变。硅板的应变变化顺序相同,但是,是压缩的。铝的热膨胀系数大约是硅的十倍。应变变化趋势相反的原因推测是由于硅铝板的弯曲引起的。
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