Experimental equipment to investigate deep energy levels in semiconductor barrier structures with high leakage current

V. V. Gudzev, V. Litvinov, V. G. Mishustin, A. D. Maslov, M. Zubkov
{"title":"Experimental equipment to investigate deep energy levels in semiconductor barrier structures with high leakage current","authors":"V. V. Gudzev, V. Litvinov, V. G. Mishustin, A. D. Maslov, M. Zubkov","doi":"10.1109/ELEKTRO49696.2020.9130257","DOIUrl":null,"url":null,"abstract":"In this paper we present description of the developed current DLTS spectrometer to investigate deep energy levels in barrier structures based on crystalline and non-crystalline semiconductors with large rectifying junction area and high leakage currents. This modified equipment allows to define DL parameters such as ionization energy, cross section and concentration in the wide temperature range 7…500К, relaxation time range 10 μs…10 s, maximum barrier capacitance till 2000 pF, relaxation current amplitude range 10 pА…10 mА.","PeriodicalId":165069,"journal":{"name":"2020 ELEKTRO","volume":"225 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 ELEKTRO","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELEKTRO49696.2020.9130257","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper we present description of the developed current DLTS spectrometer to investigate deep energy levels in barrier structures based on crystalline and non-crystalline semiconductors with large rectifying junction area and high leakage currents. This modified equipment allows to define DL parameters such as ionization energy, cross section and concentration in the wide temperature range 7…500К, relaxation time range 10 μs…10 s, maximum barrier capacitance till 2000 pF, relaxation current amplitude range 10 pА…10 mА.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
研究高漏电流半导体势垒结构中深层能级的实验设备
本文介绍了用于研究基于晶体和非晶体半导体的具有大整流结面积和高泄漏电流的势垒结构的深能级的电流dts光谱仪。这种改进的设备允许定义DL参数,如电离能,截面和浓度在宽温度范围7…500К,弛豫时间范围10 μs…10 s,最大阻挡电容到2000 pF,弛豫电流幅度范围10 pА…10 mА。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Modeling of induction-assisted 3D laser printing Ovality and Tightening Force Analysis of Large Induction Machine Rotor Photonic Services with Sensor System in One Fibre with 100-GHz DWDM Grid A reform of laboratory exercises in electricity and magnetism Analysis of the impacts of the VGSth in modern SMPS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1