Donggi Shin, K. Jang, Cam Phu Thi Nguyen, Heejun Park, Jeongsoo Kim, Youngkuk Kim, J. Yi
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引用次数: 2
Abstract
We report the effects of negatively charged aluminium-oxynitride (AlON) gate dielectrics on the electrical properties of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). The a-ITZO TFT using the AlON gate dielectric has high field-effect mobility (μFE) of 116.9 cm2N.s, high on/off current ratio of ~108 and low sub-threshold swing of 0.11. Our high a-ITZO TFTs with $\mu_{\mathrm{FE}}$ of 116.9 cm2/V.s, obtained through control of the fixed charges with nitrogen annealing was suitable for application of next-generation displays including high-frame-rate and ultra-high resolution displays.
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