Junjie An, Masaki Namai, M. Tanabe, D. Okamoto, H. Yano, N. Iwamuro
{"title":"Experimental demonstration of −730V vertical SiC p-MOSFET with high short circuit withstand capability for complementary inverter applications","authors":"Junjie An, Masaki Namai, M. Tanabe, D. Okamoto, H. Yano, N. Iwamuro","doi":"10.1109/IEDM.2016.7838391","DOIUrl":null,"url":null,"abstract":"A new p-channel vertical 4H-SiC MOSFET has been successfully fabricated for the first time. Its breakdown voltage is over −730 V and the short circuit capability is 15% higher than that of 4H-SiC n-channel MOSFET. This could be a superior power device applicable for high frequency complementary inverter.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838391","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A new p-channel vertical 4H-SiC MOSFET has been successfully fabricated for the first time. Its breakdown voltage is over −730 V and the short circuit capability is 15% higher than that of 4H-SiC n-channel MOSFET. This could be a superior power device applicable for high frequency complementary inverter.
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