AlN for mirror passivation of high power AlGaAs single quantum well separate confinement heterostructure lasers

A. Jagoda, L. Dobrzański, M. Możdżonek, S. Wróbel
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引用次数: 3

Abstract

The authors propose AlN dielectric layer as a mirror coating for AlGaAs SQW-SCH laser diodes. As a semitransparent (low reflective - LR) coating they use a single AlN layer, and as a high reflective coating (HR) they use six pairs of AlN-Si layers. The measured reflection coefficients for LR and HR coatings and optical output power characteristics for coated and uncoated mirrors are presented. The optical output power of diodes with coated mirrors is two times higher than the optical power of uncoated diodes.
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AlN用于高功率AlGaAs单量子阱分离约束异质结构激光器的镜像钝化
作者提出AlN介电层作为AlGaAs SQW-SCH激光二极管的镜面涂层。作为半透明(低反射- LR)涂层,他们使用单个AlN层,作为高反射涂层(HR),他们使用六对AlN- si层。给出了涂层和非涂层反射镜的反射系数和光输出功率特性。有涂层反射镜的二极管的光输出功率比无涂层二极管的光输出功率高2倍。
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